|
Dr. W. Alan Doolittle
|
|
Contact Information: Phone and Fax: 404-894-9884 Email: alan.doolittle@ece.gatech.edu Mail: School of Electrical and Computer Engineering Georgia Institute of Technology 777 Atlantic Dr. Atlanta, GA 30332-0250
|
|
Advanced Semiconductor Technology Facility
|
|
Funding Sources and Current/Past Projects |
|
Lithium-Semiconductor Based Mixed Ionic-Electronics for Complementary, Two-Terminal Neuromorphic Brain Simulant
Previous Support: MURI: Epitaxial Multifunctional Materials and Applications-Revolutionary Epitaxial Solutions Creating a Platform for a New Generation of Military Applications
MBE Growth of Single Crystal Lithium Oxides for Electronic and Optoelectronic Applications
P-type Doping in III-Nitrides
Ferro-Electrically Switched High Power Electronics
DURIP: Acquisition of Equipment to Facilitate Next Generation Integrated Optics: Materials Development and Performance Characterization Equipment
Development of a Rapid Thermal Molecular Beam Epitaxy System to Facilitate the Growth of Mixed Nitride/Carbide Materials and Devices |
|
Systematic Study of p-type Doping and Related Defects in III-Nitrides: Pathway toward a Nitride HBT
Previous Support: MURI: Laboratory Instrumentation Design Research for Scaleable Next Generation Epitaxy: Non-Equilibrium Wide application Epitaxial Patterning by Intelligent Control – (NEW -EPIC) |
|
CAREER: New Device Opportunities enabled by Polar Dielectric and Semiconductor Heteroepitaxy
White Light Emitter using a Self-Luminescent, Lattice Matched Substrate |
|
Lattice Matched, High Efficiency Solid State Emitters on ZnO Substrates, Subcontract to Cermet, Inc, Co-PI: Ian Ferguson
Novel High Efficiency Photovoltaic Devices based in the III-N Material System, Subcontract to University of Delaware with prime from National Renewable Energy Laboratories. Co-PI: Ian Ferguson
|
|
Development of a Lattice-matched AlInN for UV Emitters
Development of a Truly Lattice-matched III-Nitride Technology for “Near-Dislocation Free” Optoelectronic and High Frequency Electronic Applications
|
|
Cermet Inc. |
|
Applied EPI Inc. |
|
Very-High Efficiency Solar Cell
Multiferroic Materials For Microwave Parametric Power Amplifiers |
|
Without the support of various research agencies and companies, the Advanced Semiconductor Technology Facility would not be possible. We would like to thank the following people: Dan Green, Colin Wood, Ingham Mack and Paul Maki from ONR Kitt Reinhardt, Don Silversmith and Todd Steiner from AFOSR Rajinder Khosla from NSF Mark Ulrich from ARO Bill Coblenz, Douglas Kirkpatrick, and John Zolper from DARPA Bob McConnell from NREL-DOE Jeff Nause from Cermet Inc. and many others... |
|
DARPA |
|
Development of an Automatically Tunable RF Impedance Matching System for the Applied EPI Unibulb Plasma Source |
|
DURIP: Ultra High Vacuum Scanning Probe System for Investigation of Novel |
|
Army Research Office |
