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Dr. W. Alan Doolittle
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Contact Information: Phone and Fax: 404-894-9884 Email: alan.doolittle@ece.gatech.edu Mail: School of Electrical and Computer Engineering Georgia Institute of Technology 777 Atlantic Dr. Atlanta, GA 30332-0250
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Advanced Semiconductor Technology Facility
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![Text Box: Bandgap [eV]](image615.png){kind=small}
![Text Box: Wavelength [nm]](image6151.png){kind=small}
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Materials Grown: Gallium Nitride Gallium/Aluminum/Indium Nitride (GaxAlyIn1-x-y) N Applications of these Materials: High-performance transistors Blue and Ultraviolet emitters/detectors Solid State lighting Solar Cells Integrated Mach-Zehnder LiNbO3 Modulators with GaN Transistors
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Vast experience on epitaxy of III-Nitrides on a variety of novel substrates: SiC, Al2O3, LiNbO3, LiTaO3, LiAlO2, LiGaO2, Si and Ge
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Plasma Assisted / Ammonia based III-Nitride MBE
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